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IGP30N65H5 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IGP30N65H5 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 14 page 9 IGP30N65H5 Highspeedswitchingseriesfifthgeneration Rev.2.2,2014-12-04 Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) rG,GATERESISTOR[ Ω] 5 15 25 35 45 55 65 75 85 1 10 100 1000 td(off) tf td(on) tr Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=23 Ω,Dynamictestcircuitin Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 1 10 100 td(off) tf td(on) tr Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.3mA) Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=23 Ω,Dynamictestcircuitin Figure E) IC,COLLECTORCURRENT[A] 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Eoff Eon Ets |
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