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SIR496DP Datasheet(PDF) 2 Page - Vishay Telefunken |
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SIR496DP Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 13 page www.vishay.com 2 Document Number: 68859 S10-2004-Rev. B, 06-Sep-10 Vishay Siliconix SiR496DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 20 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0033 0.0045 Ω VGS = 4.5 V, ID = 10 A 0.0046 0.0058 Forward Transconductancea gfs VDS = 10 V, ID = 20 A 50 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 1570 pF Output Capacitance Coss 555 Reverse Transfer Capacitance Crss 195 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 10 A 28 42 nC VDS = 10 V, VGS = 4.5 V, ID = 10 A 13.2 20 Gate-Source Charge Qgs 3.8 Gate-Drain Charge Qgd 4.0 Gate Resistance Rg f = 1 MHz 0.2 0.7 1.4 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 21 35 ns Rise Time tr 13 26 Turn-Off Delay Time td(off) 29 55 Fall Time tf 17 30 Turn-On Delay Time td(on) VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 10 20 Rise Time tr 816 Turn-Off Delay Time td(off) 22 40 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 35 A Pulse Diode Forward Currenta ISM 70 Body Diode Voltage VSD IS = 3 A 0.75 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 22 44 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta 11 ns Reverse Recovery Rise Time tb 11 |
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