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Document Number: 65361

S09-1924-Rev. A, 28-Sep-09

Vishay Siliconix

SiA406DJ

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Package limited

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

12

V

ΔV

11

mV/°C

ΔV

- 2.9

Gate-Source Threshold Voltage

0.4

1.0

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

10

20

A

0.0165

0.0198

Ω

0.0185

0.0222

0.0220

0.0264

38

S

Input Capacitance

1380

pF

Output Capacitance

345

Reverse Transfer Capacitance

155

Total Gate Charge

15.2

23

nC

13.7

21

Gate-Source Charge

2.6

Gate-Drain Charge

1.1

Gate Resistance

f = 1 MHz

0.5

2.5

5

Ω

Turn-On Delay Time

10

20

ns

Rise Time

918

Turn-Off Delay Time

40

60

Fall Time

14

21

Turn-On Delay Time

612

Rise Time

11

17

Turn-Off Delay Time

27

41

Fall Time

918

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

A

Pulse Diode Forward Current

20

Body Diode Voltage

0.8

1.2

V

Body Diode Reverse Recovery Time

22

33

ns

Body Diode Reverse Recovery Charge

714

nC

Reverse Recovery Fall Time

8

ns

Reverse Recovery Rise Time

14