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SIA406DJ Datasheet(PDF) 2 Page - Vishay Telefunken |
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SIA406DJ Datasheet(HTML) 2 Page - Vishay Telefunken |
2 / 9 page www.vishay.com 2 Document Number: 65361 S09-1924-Rev. A, 28-Sep-09 Vishay Siliconix SiA406DJ New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 11 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.9 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V 1 µA VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 10.8 A 0.0165 0.0198 Ω VGS = 2.5 V, ID = 10.2 A 0.0185 0.0222 VGS = 1.8 V, ID = 3 A 0.0220 0.0264 Forward Transconductancea gfs VDS = 6 V, ID = 10.8 A 38 S Dynamicb Input Capacitance Ciss VDS = 6 V, VGS = 0 V, f = 1 MHz 1380 pF Output Capacitance Coss 345 Reverse Transfer Capacitance Crss 155 Total Gate Charge Qg VDS = 6 V, VGS = 5 V, ID = 10.8 A 15.2 23 nC VDS = 6 V, VGS = 4.5 V, ID = 10.8 A 13.7 21 Gate-Source Charge Qgs 2.6 Gate-Drain Charge Qgd 1.1 Gate Resistance Rg f = 1 MHz 0.5 2.5 5 Ω Turn-On Delay Time td(on) VDD = 6 V, RL = 0.7 Ω ID ≅ 8.6 A, VGEN = 4.5 V, Rg = 1 Ω 10 20 ns Rise Time tr 918 Turn-Off Delay Time td(off) 40 60 Fall Time tf 14 21 Turn-On Delay Time td(on) VDD = 6 V, RL = 0.7 Ω ID ≅ 8.6 A, VGEN = 8 V, Rg = 1 Ω 612 Rise Time tr 11 17 Turn-Off Delay Time td(off) 27 41 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4.5c A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 8.6 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recovery Charge Qrr 714 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 14 |
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