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IPL60R1K5C6S Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. IPL60R1K5C6S
Description  Very high commutation ruggedness
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPL60R1K5C6S Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
600VCoolMOS™C6PowerTransistor
IPL60R1K5C6S
Rev.2.0,2014-07-08
Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Continuous drain current
1)
ID
-
-
-
-
3
1.9
A
TC = 25°C
TC = 100°C
Pulsed drain current
2)
ID,pulse
-
-
7.7
A
TC=25°C
Avalanche energy, single pulse
EAS
-
-
26
mJ
ID =0.6A; VDD = 50V
Avalanche energy, repetitive
EAR
-
-
0.09
mJ
ID =0.6A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
0.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage
VGS
-20
-30
-
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
Ptot
-
-
26.6
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
2.6
A
TC=25°C
Diode pulse current
2)
IS,pulse
-
-
7.2
A
TC = 25°C
Reverse diode dv/dt
3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed
3)
dif/dt
-
-
500
A/
µs VDS=0...400V,ISD<=IS,Tj=25°C
3Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Thermal resistance, junction - case
RthJC
-
-
4.7
°C/W -
Thermal resistance, junction - ambient
RthJA
-
35
62
°C/W
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm
2 (one layer 70
µm
thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
-
260
°C
reflow MSL1
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG


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