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IPG20N10S4L-22A Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPG20N10S4L-22A Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPG20N10S4L-22A Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC -- - 2.5 K/W SMD version, device on PCB R thJA minimal footprint - 100 - 6cm 2 cooling area3) -60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D= 25µA 1.1 1.6 2.1 Zero gate voltage drain current 4) I DSS V DS=100V, V GS=0V, T j=25°C -0.01 1 µA V DS=100V, V GS=0V, T j=125°C 2) - 1 100 Gate-source leakage current 4) I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance 4) R DS(on) V GS=4.5V, I D=10A -24 28 m Ω V GS=10V, I D=17A -20 22 Values Rev. 1.0 page 2 2013-03-04 |
Similar Part No. - IPG20N10S4L-22A |
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Similar Description - IPG20N10S4L-22A |
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