IPG20N10S4L-22A datasheet(2/9 Pages) INFINEON

Part #	IPG20N10S4L-22A

Description	Dual N-channel Logic Level - Enhancement mode

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

IPG20N10S4L-22A

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

2)

Thermal resistance, junction - case

R thJC

--

-

2.5

K/W

SMD version, device on PCB

R thJA

minimal footprint

-

100

-

6cm

2 cooling area3)

-60

-

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0V, I D= 1mA

100

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D= 25µA

1.1

1.6

2.1

Zero gate voltage drain current

4)

I DSS

V DS=100V, V GS=0V,

T j=25°C

-0.01

1

µA

V DS=100V, V GS=0V,

T j=125°C

2)

-

1

100

Gate-source leakage current

4)

I GSS

V GS=16V, V DS=0V

-

100

nA

Drain-source on-state resistance

4)

R DS(on)

V GS=4.5V, I D=10A

-24

28

m

Ω

V GS=10V, I D=17A

-20

22

Values

Rev. 1.0

page 2

2013-03-04

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IPG20N10S4L-22A Datasheet(PDF) 2 Page - Infineon Technologies AG

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