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IPP120N08S4-04 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPP120N08S4-04 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 9 page  IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 120 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 72 74 76 78 80 82 84 86 88 -55 -15 25 65 105 145 T j [°C] 16 V 64 V 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 Q gate [nC] 99 A 60 A 30 A 0 100 200 300 400 500 600 700 25 75 125 175 T j [°C] Rev. 1.0 page 7 2014-06-20 |
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