Electronic Components Datasheet Search |
|
IPB120N10S4-03 Datasheet(PDF) 2 Page - Infineon Technologies AG |
|
IPB120N10S4-03 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thJC - - - 0.6 K/W Thermal resistance, junction - ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm 2 cooling area3) - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=180µA 2.0 2.7 3.5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.1 1 µA V DS=100V, V GS=0V, T j=125°C 2) - 10 100 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 3.4 3.9 m W V GS=10V, I D=100A, SMD version - 3.0 3.5 Values Rev. 1.0 page 2 2014-06-30 |
Similar Part No. - IPB120N10S4-03 |
|
Similar Description - IPB120N10S4-03 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |