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9N50KG-TF2-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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9N50KG-TF2-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 9N50K-MT Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R205-016.D ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V VDS=500V, VGS=0V 1 Drain-Source Leakage Current IDSS VDS=400V, TC=125°C 10 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A 0.85 Ω DYNAMIC PARAMETERS Input Capacitance CISS 685 pF Output Capacitance COSS 115 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 12 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 62 ns Rise Time tR 86 ns Turn-OFF Delay Time tD(OFF) 149 ns Fall-Time tF VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) 83 ns Total Gate Charge QG 27.2 nC Gate to Source Charge QGS 8.4 nC Gate to Drain Charge QGD VDS=50V, ID=1.3A, VGS=10V (Note 1, 2) 6.8 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 9 A Maximum Body-Diode Pulsed Current ISM 36 A Drain-Source Diode Forward Voltage VSD IS=9A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. |
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