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5N50KL-TM3-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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5N50KL-TM3-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 7 page 5N50K-MT Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-B22.C ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA 0.5 V/°C VDS=500V, VGS=0V 1 Drain-Source Leakage Current IDSS VDS=400V, TC=125°C 10 µA Forward VGS=30V, VDS=0V 100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A 1.23 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS 525 625 pF Output Capacitance COSS 64 105 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 6 20 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 46 60 ns Rise Time tR 50 70 ns Turn-OFF Delay Time tD(OFF) 54 130 ns Fall-Time tF VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 44 105 ns Total Gate Charge QG 21.6 24 nC Gate to Source Charge QGS 5.6 nC Gate to Drain Charge QGD VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 5.5 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V 1.4 V Reverse Recovery Time trr 263 ns Reverse Recovery Charge QRR IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 1.9 µC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. |
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