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LM34910SD Datasheet(PDF) 2 Page - Texas Instruments |
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LM34910SD Datasheet(HTML) 2 Page - Texas Instruments |
2 / 18 page LM34910 4 ON TIMER 280 ns OFF TIMER LEVEL SHIFT THERMAL SHUTDOWN 7V SERIES REGULATOR VCC UVLO 8V-36V Input VIN C1 RON C5 10 RON/ SD 8 7 SS 6 FB 5 RTN LOGIC REGULATION COMPARATOR OVER-VOLTAGE COMPARATOR + - + - + - D1 SGND ISEN 3 SW 1 BST 2 VCC 9 VIN COMPLETE START RON START COMPLETE C3 C4 R1 R2 R3 C2 CURRENT LIMIT COMPARATOR RSENSE 50 m: VOUT1 VOUT2 2.875V 2.5V 11.5 PA GATE DRIVE UVLO L1 + - + - 0.7V DRIVER DRIVER 62.5 mV C6 LM34910 SNVS297B – OCTOBER 2004 – REVISED MARCH 2013 www.ti.com Typical Application Circuit and Block Diagram PIN DESCRIPTIONS PIN NAME DESCRIPTION APPLICATION INFORMATION Internally connected to the buck switch source. Connect to 1 SW Switching Node the external inductor, diode, and boost capacitor. Connect a 0.022 µF capacitor from SW to this pin. An 2 BST Boost pin for boot-strap capacitor internal diode charges the capacitor during the off-time. Internally the current sense resistor connects from this pin to 3 ISEN Current sense input SGND. Re-circulating current flows out of this pin to the free- wheeling diode. Current limit is set at 1.25A. Re-circulating current flows into this pin to the current sense 4 SGND Sense Ground resistor. Ground for all internal circuitry other than the current limit 5 RTN Circuit Ground detection. Internally connected to the regulation and over-voltage 6 FB Feedback comparators. The regulation level is 2.5V. An internal 11.5 µA current source charges an external 7 SS Softstart capacitor to 2.5V to provide the softstart function. An external resistor from VIN to this pin sets the buck switch 8 RON/SD On-time Control and Shutdown on-time. Grounding this pin shuts down the regulator. Nominally regulated to 7.0V. An external voltage (8V-14V) 9 VCC Output from the start-up regulator can be connected to this pin to reduce internal dissipation. An internal diode connects VCC to VIN. 10 VIN Input supply voltage Nominal input range is 8.0V to 36V. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: LM34910 |
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