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UF601Q Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UF601Q
Description  N-CHANNEL DEPLETION-MODE POWER MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UF601Q Datasheet(HTML) 3 Page - Unisonic Technologies

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UF601Q
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R502-A25.C
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Drain to Source Voltage, VDS (mV)
0
50
100
150
200
250
300
0
200
600
800
1000
0
1.0
400
2.5
3.5
0
200
400
600
800
VGS=0V, ID=3mA
0.5
1.5
2.0
3.0
1000
0
Drain Current vs. Source to Drain Voltage
Source to Drain Voltage, VSD (V)
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.


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