F2N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-952.A

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Drain Current

Continuous

2.0

A

Pulsed (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

100

mJ

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

44

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°С/W

Junction to Case

2.87

°С/W