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F2N60L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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F2N60L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 6 page F2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-952.A ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 100 mJ Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC = 25°С) PD 44 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 °С/W Junction to Case θJc 2.87 °С/W |
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