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F2N60G-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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F2N60G-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page  F2N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-952.A ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS △ /TJ ID=250μA, Referenced to 25°C 0.4 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 40 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 4.7 5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, f =1MHz 350 pF Output Capacitance COSS 50 pF Reverse Transfer Capacitance CRSS 7 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) 35 40 ns Turn-On Rise Time tR 50 60 ns Turn-Off Delay Time tD(OFF) 85 100 ns Turn-Off Fall Time tF 70 80 ns Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 16 20 nC Gate-Source Charge QGS 3.8 nC Gate-Drain Charge QGD 4.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4 V Continuous Drain-Source Current ISD 2.0 A Pulsed Drain-Source Current ISM 8.0 A Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note 1) 90 100 130 ns Reverse Recovery Charge QRR 0.72 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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