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3N65KL-TA3-T Datasheet(PDF) 4 Page - Unisonic Technologies

Part # 3N65KL-TA3-T
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N65KL-TA3-T Datasheet(HTML) 4 Page - Unisonic Technologies

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3N65K-MK
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R205-009.b
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS = 30 V, VDS = 0 V
100
nA
Reverse
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
0.6
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
2.5
4.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 1.5A
4.0
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
388 500
pF
Output Capacitance
COSS
41
65
pF
Reverse Transfer Capacitance
CRSS
5.1
11
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
43
ns
Turn-On Rise Time
tR
20
ns
Turn-Off Delay Time
tD(OFF)
94
ns
Turn-Off Fall Time
tF
22
ns
Total Gate Charge
QG
VDS= 50V,ID= 1.3A,
VGS= 10 V (Note 1, 2)
14
16
nC
Gate-Source Charge
QGS
4.2
nC
Gate-Drain Charge
QDD
1.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3.0
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature


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