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3N50KL-TF2-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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3N50KL-TF2-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 7 page 3N50K-MK Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R205-036.B ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) ID 3 (Note 5) A Pulsed (Note 2) IDM 12 (Note 5) A Avalanche Current (Note 2) IAR 3 A Avalanche Energy Single Pulsed (Note 3) EAS 150 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220 PD 75 W TO-220F/TO-220F1 TO-220F3 25 W TO-220F2 26 W TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 50 W Derate above 25°C TO-220 PD 0.5 W/°C TO-220F/TO-220F1 TO-220F3 0.2 W/°C TO-220F2 0.208 W/°C TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 0.4 W/°C Power Dissipation PD 36 W Derate above 25°C 0.288 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 33.3 mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature. THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 θJA 62.5 °C/W TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 110 Junction to Case TO-220 θJC 1.67 °C/W TO-220F/TO-220F1 TO-220F3 4.9 TO-220F2 4.8 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D 2.5 |
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