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4N60L-TF3T-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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4N60L-TF3T-T Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page  4N60-Q Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 7 www.unisonic.com.tw QW-R502-972.C ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A 2.2 2.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 520 600 pF Output Capacitance COSS 52 70 pF Reverse Transfer Capacitance CRSS 11 15 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) 60 80 ns Turn-On Rise Time tR 70 ns Turn-Off Delay Time tD(OFF) 96 120 ns Turn-Off Fall Time tF 50 70 ns Total Gate Charge QG VDS= 50V,ID= 1.3A, IG = 100μA VGS= 10V (Note 1, 2) 20 nC Gate-Source Charge QGS 6 nC Gate-Drain Charge QGD 4 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) 250 ns Reverse Recovery Charge QRR 1.5 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature |
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