IKP20N60TA datasheet(6/16 Pages) INFINEON

Part #	IKP20N60TA

Description	600V low loss switching series third generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKP20N60TA

TrenchStop®series

Rev.2.2,2013-08-27

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time

trr

-

41

-

ns

Diode reverse recovery charge

Qrr

-

0.31

-

µC

Diode peak reverse recovery current

Irrm

-

13.3

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

711

-

A/µs

Tvj=25°C,

VR=400V,

IF=20.0A,

diF/dt=880A/µs

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atTvj=150°C

Turn-on delay time

td(on)

-

18

-

ns

Rise time

tr

-

17

-

ns

Turn-off delay time

td(off)

-

217

-

ns

Fall time

tf

-

70

-

ns

Turn-on energy

Eon

-

0.47

-

mJ

Turn-off energy

Eoff

-

0.60

-

mJ

Total switching energy

Ets

-

1.07

-

mJ

Tvj=150°C,

VCC=400V,IC=20.0A,

VGE=0.0/15.0V,

rG=12.0

Ω,Lσ=131nH,

C

σ=31pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

DiodeCharacteristic,atTvj=150°C

Diode reverse recovery time

trr

-

201

-

ns

Diode reverse recovery charge

Qrr

-

1.28

-

µC

Diode peak reverse recovery current

Irrm

-

16.6

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

481

-

A/µs

Tvj=150°C,

VR=400V,

IF=20.0A,

diF/dt=800A/µs

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IKP20N60TA Datasheet(PDF) 6 Page - Infineon Technologies AG

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