IKQ120N60TA datasheet(5/16 Pages) INFINEON

Part #	IKQ120N60TA

Description	very tight parameter distribution

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Manufacturer	INFINEON [Infineon Technologies AG]

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5

IKQ120N60TA

TRENCHSTOPTMseries

Rev.2.2,2014-11-21

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

StaticCharacteristic

Collector-emitter breakdown voltage

V(BR)CES VGE=0V,IC=0.20mA

600

-

V

Collector-emitter saturation voltage

VCEsat

VGE=15.0V,IC=120.0A

Tvj=25°C

Tvj=175°C

-

1.50

1.90

2.00

-

V

Diode forward voltage

VF

VGE=0V,IF=120.0A

Tvj=25°C

Tvj=175°C

-

1.65

1.60

2.05

-

V

Gate-emitter threshold voltage

VGE(th)

IC=1.90mA,VCE=VGE

4.1

4.9

5.7

V

Zero gate voltage collector current

ICES

VCE=600V,VGE=0V

Tvj=25°C

Tvj=175°C

-

3000.0

40.0

-

µA

Gate-emitter leakage current

IGES

VCE=0V,VGE=20V

-

100

nA

Transconductance

gfs

VCE=20V,IC=120.0A

-

75.0

-

S

Integrated gate resistor

rG

none

Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

DynamicCharacteristic

Input capacitance

Cies

-

7530

-

Output capacitance

Coes

-

446

-

Reverse transfer capacitance

Cres

-

206

-

VCE=25V,VGE=0V,f=1MHz

pF

Gate charge

QG

VCC=480V,IC=120.0A,

VGE=15V

-

772.0

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from

case

LE

-

13.0

-

nH

Short circuit collector current

Max. 1000 short circuits

Time between short circuits:

≥ 1.0s

IC(SC)

VGE=15.0V,VCC

≤400V,

tSC

≤5µs

Tvj=150°C

-

846

-

A

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