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IKQ100N60T Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IKQ100N60T
Description  600V low loss switching series third generation
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKQ100N60T Datasheet(HTML) 6 Page - Infineon Technologies AG

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IKQ100N60T
TRENCHSTOPTMseries
Rev.2.2,2014-11-18
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
-
230
-
ns
Diode reverse recovery charge
Qrr
-
2.80
-
µC
Diode peak reverse recovery current
Irrm
-
23.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-450
-
A/µs
Tvj=25°C,
VR=400V,
IF=100.0A,
diF/dt=1000A/µs
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
-
31
-
ns
Rise time
tr
-
52
-
ns
Turn-off delay time
td(off)
-
351
-
ns
Fall time
tf
-
42
-
ns
Turn-on energy
Eon
-
6.00
-
mJ
Turn-off energy
Eoff
-
3.70
-
mJ
Total switching energy
Ets
-
9.70
-
mJ
Tvj=175°C,
VCC=400V,IC=100.0A,
VGE=0.0/15.0V,
RG(on)=3.6
Ω,RG(off)=3.6Ω,
L
σ=63nH,Cσ=31pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time
trr
-
328
-
ns
Diode reverse recovery charge
Qrr
-
8.70
-
µC
Diode peak reverse recovery current
Irrm
-
48.0
-
A
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
-
-847
-
A/µs
Tvj=175°C,
VR=400V,
IF=100.0A,
diF/dt=1000A/µs


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