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4N65G-E-K08-5060-R Datasheet(PDF) 4 Page - Unisonic Technologies

Part # 4N65G-E-K08-5060-R
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N65G-E-K08-5060-R Datasheet(HTML) 4 Page - Unisonic Technologies

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4N65
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R502-397.N
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
650
V
VDS = 650 V, VGS = 0 V
10
μA
Drain-Source Leakage Current
IDSS
VDS = 480 V, TC =125°С
100
μA
Forward
VGS = 30 V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature Coefficient
BVDSS/△TJ ID=250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
2.4
2.5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
670 750
pF
Output Capacitance
COSS
70
90
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
23
26
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
45
85
ns
Turn-On Rise Time
tR
100 140
ns
Turn-Off Delay Time
tD(OFF)
200 240
ns
Turn-Off Fall Time
tF
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
130 150
ns
Total Gate Charge
QG
100 120
nC
Gate-Source Charge
QGS
17
19
nC
Gate-Drain Charge
QGD
VDS= 520V,ID= 4.0A,
VGS= 10V (Note 1, 2)
20
26
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4A
1.4
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
4.4
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
ns
Reverse Recovery Charge
QRR
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
1.5
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.


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