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3N60L-TF3T-T Datasheet(PDF) 4 Page - Unisonic Technologies

Part # 3N60L-TF3T-T
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N60L-TF3T-T Datasheet(HTML) 4 Page - Unisonic Technologies

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3N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 9
www.unisonic.com.tw
QW-R502-110.H
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=250 μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600 V, VGS=0 V
10
μA
Gate-Source Leakage Current
Forward
IGSS
VGS=30 V, VDS=0 V
100
nA
Reverse
VGS=-30 V, VDS=0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BVDSS/△TJ ID=250μA, Referenced to 25°C
0.6
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID=1.5A
2.8
3.6
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
350 450
pF
Output Capacitance
COSS
50
65
pF
Reverse Transfer Capacitance
CRSS
5.5
7.5
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
(Note 1, 2)
35
50
ns
Turn-On Rise Time
tR
60
70
ns
Turn-Off Delay Time
tD(OFF)
100 150
ns
Turn-Off Fall Time
tF
65
75
ns
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
VGS=10V (Note 1, 2)
18.5
23
nC
Gate-Source Charge
QGS
5.2
nC
Gate-Drain Charge
QGD
4.9
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS=3.0A
1.4
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
3.0
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Reverse Recovery Time
tRR
VGS=0V, IS=3.0A,
dIF/dt = 100 A/μs (Note 1)
210
ns
Reverse Recovery Charge
QRR
1.2
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.


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