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3N60L-TF3T-T Datasheet(PDF) 4 Page - Unisonic Technologies |
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3N60L-TF3T-T Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 9 page 3N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 9 www.unisonic.com.tw QW-R502-110.H ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250 μA 600 V Drain-Source Leakage Current IDSS VDS=600 V, VGS=0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS=30 V, VDS=0 V 100 nA Reverse VGS=-30 V, VDS=0 V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10 V, ID=1.5A 2.8 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS 5.5 7.5 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 35 50 ns Turn-On Rise Time tR 60 70 ns Turn-Off Delay Time tD(OFF) 100 150 ns Turn-Off Fall Time tF 65 75 ns Total Gate Charge QG VDS=50V, ID=1.3A, IG=100μA VGS=10V (Note 1, 2) 18.5 23 nC Gate-Source Charge QGS 5.2 nC Gate-Drain Charge QGD 4.9 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0 V, IS=3.0A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 3.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A Reverse Recovery Time tRR VGS=0V, IS=3.0A, dIF/dt = 100 A/μs (Note 1) 210 ns Reverse Recovery Charge QRR 1.2 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. |
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