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UP9971G-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UP9971G-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page UP9971 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-294.D ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (VGS=10V) ID 5 A SOP-8 30 A Pulsed Drain Current (Note 2,3) DIP-8 IDM 20 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by TJ(MAX) Pulse width≦300µs, Duty cycle≦2% THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 60 V Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0V 1 µA Gate-Body Leakage Current IGSS VGS=±25V ±100 nA Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=1mA 0.06 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.5 3 V VGS=10V, ID=5A 60 Static Drain-Source On-Resistance (Note) RDS(ON) VGS=4.5V, ID=2.5A 72 mΩ SOP-8 16 S Forward Transconductance (Note) DIP-8 gFS VDS=10V, ID=5 A 7 S DYNAMIC PARAMETERS SOP-8 1658 pF Input Capacitance DIP-8 CISS 1560 pF Output Capacitance COSS 156 pF SOP-8 109 pF Reverse Transfer Capacitance DIP-8 CRSS VDS=25V, VGS=0V, f =1.0MHz 110 pF SWITCHING PARAMETERS Total Gate Charge (Note) QG 32.5 nC Gate Source Charge QGS 4.9 nC Gate Drain Charge QGD VDS=48V, VGS=10V, ID=5A 8.8 nC Turn-ON Delay Time (Note) tD(ON) 9.6 ns Turn-ON Rise Time tR 10 ns Turn-OFF Delay Time tD(OFF) 30 ns Turn-OFF Fall-Time tF VGS=10V, VDS=30V, RD=6Ω, RG=3.3Ω, ID=5 A 5.5 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage (Note) VSD IS =1.6 A,VGS =0 V 1.2 V Body Diode Reverse Recovery Time trr 29.2 ns Body Diode Reverse Recovery Charge QRR IS=5A, VGS=0V, di/dt=100A/µs 48 nC Note: Pulse width≦300µs, Duty cycle≦2% |
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