UP9971

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-294.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±25

V

5

A

SOP-8

30

A

Pulsed Drain Current (Note 2,3)

DIP-8

20

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width≦300µs, Duty cycle≦2%



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Zero Gate Voltage Drain Current

1

µA

Gate-Body Leakage Current

±100

nA

0.06

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

1.5

3

V

60

Static Drain-Source On-Resistance (Note)

72

mΩ

SOP-8

16

S

Forward Transconductance

(Note)

DIP-8

7

S

DYNAMIC PARAMETERS

SOP-8

1658

pF

Input Capacitance

DIP-8

1560

pF

Output Capacitance

156

pF

SOP-8

109

pF

Reverse Transfer Capacitance

DIP-8

f =1.0MHz

110

pF

SWITCHING PARAMETERS

Total Gate Charge (Note)

32.5

nC

Gate Source Charge

4.9

nC

Gate Drain Charge

8.8

nC

Turn-ON Delay Time (Note)

9.6

ns

Turn-ON Rise Time

10

ns

Turn-OFF Delay Time

30

ns

Turn-OFF Fall-Time

5.5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage (Note)

1.2

V

Body Diode Reverse Recovery Time

29.2

ns

Body Diode Reverse Recovery Charge

di/dt=100A/µs

48

nC

Note: Pulse width≦300µs, Duty cycle≦2%