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TC4426 Datasheet(PDF) 2 Page - Microchip Technology

Part No. TC4426
Description  1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
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Maker  MICROCHIP [Microchip Technology]
Homepage  http://www.microchip.com
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TC4426 Datasheet(HTML) 2 Page - Microchip Technology

   
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1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
© 2001 Microchip Technology Inc.
DS21422A
TC4426/7/8-8
10/21/96
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0
°C to +70°C
E Version .......................................... – 40
°C to +85°C
M Version ....................................... – 55
°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic ............................................................. 730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.4
V
VIL
Logic 0 Low Input Voltage
0.8
V
IIN
Input Current
0V
V
IN
V
DD
– 1
1
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
RO
Output Resistance
VDD = 18V, IO = 10mA
7
10
IPK
Peak Output Current
Duty Cycle
2%, t 30µsec
1.5
A
IREV
Latch-Up Protection
Duty Cycle
2%
> 0.5
A
Withstand Reverse Current
t
30 µsec
Switching Time (Note 1)
tR
Rise Time
Figure 1
19
30
nsec
tF
Fall Time
Figure 1
19
30
nsec
tD1
Delay Time
Figure 1
20
30
nsec
tD2
Delay Time
Figure 1
40
50
nsec
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
4.5
mA
VIN = 0V (Both Inputs)
0.4
mA
NOTE: 1. Switching times are guaranteed by design.
PIN CONFIGURATIONS
TC4426
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
VDD
NC = NO INTERNAL CONNECTION
TC4427
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
TC4428
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2,4
7,5
INVERTING
2,4
7,5
NONINVERTING
VDD
2
4
DIFFERENTIAL
7
5
VDD
NOTE: SOIC pinout is identical to DIP.


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