PESD5V0S1ULD

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Product data sheet

Rev. 1 — 19 October 2010

4 of 12

NXP Semiconductors

PESD5V0S1ULD

Unidirectional ESD protection diode

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

μs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1 to pin 2.

[3]

ANSI/ESD STM5.1-2008.

Table 8.

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

reverse standoff voltage

-

-

5.0

V

reverse leakage current

-

0.1

1

μA

breakdown voltage

6.46.8

7.2V

diode capacitance

f = 1 MHz;

-

152

200

pF

clamping voltage

[1][2]

-

-

9

V

-

-

20

V

dynamic resistance

[2][3] -0.3

-

Ω

Fig 4.

Peak pulse power as a function of exponential

pulse duration; typical values

Fig 5.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

10

006aac483

(W)

10

0

200

150

50

100

001aaa633

0.4

0.8

1.2

0