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IKW30N65EL5 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IKW30N65EL5 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 16 page 9 IKW30N65EL5 LowVCE(sat)seriesfifthgeneration Rev.2.1,2014-12-10 Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) RG,GATERESISTANCE[ Ω] 0 10 20 30 40 50 60 70 1 10 100 1000 td(off) tf td(on) tr Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG(on)=10 Ω,RG(off)=10Ω,dynamic test circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 1 10 100 1000 td(off) tf td(on) tr Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 1 2 3 4 5 6 7 typ. min. max. Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=10 Ω,RG(off)=10Ω, dynamic test circuit in Figure E) IC,COLLECTORCURRENT[A] 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 6 7 8 Eoff Eon Ets |
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