IKW30N65EL5 datasheet(9/16 Pages) INFINEON

Part #	IKW30N65EL5

Description	Best-in-Class tradeoff between conduction and switching losses

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Manufacturer	INFINEON [Infineon Technologies AG]

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9 / 16 page

9

IKW30N65EL5

LowVCE(sat)seriesfifthgeneration

Rev.2.1,2014-12-10

Figure 9.

Typicalswitchingtimesasafunctionofgate

resistance

(inductiveload,Tvj=150°C,VCE=400V,

VGE=0/15V,IC=30A,dynamictestcircuitin

Figure E)

RG,GATERESISTANCE[

Ω]

0

10

20

30

40

50

60

70

1

10

100

1000

td(off)

tf

td(on)

tr

Figure 10.

Typicalswitchingtimesasafunctionof

junctiontemperature

(inductiveload,VCE=400V,VGE=0/15V,

IC=30A,RG(on)=10

Ω,RG(off)=10Ω,dynamic

test circuit in Figure E)

Tvj,JUNCTIONTEMPERATURE[°C]

25

50

75

100

125

150

175

1

10

100

1000

td(off)

tf

td(on)

tr

Figure 11.

Gate-emitterthresholdvoltageasafunction

ofjunctiontemperature

(IC=0.4mA)

Tvj,JUNCTIONTEMPERATURE[°C]

25

50

75

100

125

150

175

1

2

3

4

5

6

7

typ.

min.

max.

Figure 12.

Typicalswitchingenergylossesasa

functionofcollectorcurrent

(inductiveload,Tvj=150°C,VCE=400V,

VGE=0/15V,RG(on)=10

Ω,RG(off)=10Ω,

dynamic test circuit in Figure E)

IC,COLLECTORCURRENT[A]

0

10

20

30

40

50

60

70

80

90

0

1

2

3

4

5

6

7

8

Eoff

Eon

Ets

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IKW30N65EL5 Datasheet(PDF) 9 Page - Infineon Technologies AG

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