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IGW50N65H5A Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IGW50N65H5A Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 14 page 10 IGW50N65H5A Highspeedswitchingseriesfifthgeneration Rev.2.1,2015-01-15 Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=25A,RG(on)=12 Ω,RG(off)=12Ω,dynamic test circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Eoff Eon Ets Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=25A,RG(on)=12 Ω,RG(off)=12Ω,dynamic test circuit in Figure E) VCE,COLLECTOR-EMITTERVOLTAGE[V] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Eoff Eon Ets Figure 15. Typicalgatecharge (IC=50A) QG,GATECHARGE[nC] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 VCC=130V VCC=520V Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 5 10 15 20 25 30 1 10 100 1000 1E+4 Cies Coes Cres |
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