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TC1107 Datasheet(PDF) 2 Page - Microchip Technology

Part No. TC1107
Description  300mA CMOS LDO with Shutdown and VREF Bypass
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1107 Datasheet(HTML) 2 Page - Microchip Technology

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TC1107
DS21356B-page 2
© 2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage.................. (VSS – 0.3V) to (VIN +0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ <125°C
Storage Temperature.......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1107 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN =VOUT +1V, IL =0.1mA,CL =3.3µF, SHDN >VIH,TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
6.0
V
Note 7
IOUTMAX
Maximum Output Current
300
——
mA
VOUT
Output Voltage
VR –2.5%
VR ±0.5%
VR +2.5%
V
Note 1
∆VOUT/∆TVOUT Temperature Coefficient
40
—ppm/°C
Note 2
∆VOUT/∆VIN
Line Regulation
0.05
0.35
%(VR +1V) ≤ VIN ≤ 6V
∆V
OUT/VOUT
Load Regulation
1.1
2.0
%IL = 0.1mA to IOUTMAX
VIN-VOUT
Dropout Voltage
20
80
270
30
160
480
mV
IL =0.1mA
IL =100mA
IL =300mA (Note 4)
ISS1
Supply Current
50
90
µA
SHDN =VIH,
ISS2
Shutdown Supply Current
0.05
0.5
µA
SHDN =0V
PSRR
Power Supply Rejection Ratio
60
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
550
650
mA
VOUT =0V
∆VOUT/∆PD
Thermal Regulation
0.04
V/W
Note 5
eN
Output Noise
260
nV/
√Hz F= 1kHz,COUT =1µF,
RLOAD =50Ω
SHDN Input
VIH
SHDN Input High Threshold
45
——
%VIN
VIL
SHDN Input Low Threshold
15
%VIN
Note
1:
VR is the regulator output voltage setting.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a
1V differential.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA,TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7:
The minimum VIN has to justify the conditions: VIN ≥ VR +VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX.
TC VOUT =(VOUTMAX –VOUTMIN)x 10
6
VOUT x ∆T


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