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BTA2008W-800D Datasheet(PDF) 8 Page - NXP Semiconductors |
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BTA2008W-800D Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page NXP Semiconductors BTA2008W-800D 3Q Hi-Com Triac BTA2008W-800D All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 14 August 2014 8 / 15 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 9 0.25 - 5 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 9 0.25 - 5 mA IGT gate trigger current VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 9 0.25 - 5 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 10 - - 10 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 10 - - 20 mA IL latching current VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 10 - - 10 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 11 - - 10 mA VT on-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 12 - 1.35 1.6 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 13 - 0.9 1.5 V VGT gate trigger voltage VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 13 0.2 0.3 - V ID off-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs; gate open circuit 0.5 - - A/ms |
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