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TC1054 Datasheet(PDF) 3 Page - Microchip Technology

Part No. TC1054
Description  50mA, 100mA and 150mA CMOS LDOs with Shutdown and ERROR Output
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

TC1054 Datasheet(HTML) 3 Page - Microchip Technology

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© 2002 Microchip Technology Inc.
DS21350B-page 3
TC1054/TC1055/TC1186
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (VIN +0.3V)
Power Dissipation ............... Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V
Operating Temperature Range ......-40°C < TJ < 125°C
Storage Temperature ......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN =VOUT +1V, IL =100µA, CL =3.3µF, SHDN >VIH,TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
6.0
V
Note 8
IOUTMAX
Maximum Output Current
50
100
150
mA
TC1054
TC1055
TC1186
VOUT
Output Voltage
VR –2.5% VR ±0.5% VR +2.5%
V
Note 1
TCVOUT
VOUT Temperature Coefficient
20
40
ppm/°C
Note 2
∆VOUT/∆VIN
Line Regulation
0.05
0.35
%(VR +1V) ≤ VIN ≤ 6V
∆VOUT/VOUT
Load Regulation
TC1054; TC1055
TC1186
0.5
0.5
2
3
%IL = 0.1mA to IOUTMAX
IL = 0.1mA to IOUTMAX
(Note 3)
VIN-VOUT
Dropout Voltage
TC1055; TC1186
TC1186
2
65
85
180
270
120
250
400
mV
IL =100µA
IL =20mA
IL =50mA
IL =100mA
IL =150mA (Note 4)
IIN
Supply Current
50
80
µA
SHDN =VIH,IL =0
IINSD
Shutdown Supply Current
0.05
0.5
µA
SHDN =0V
PSRR
Power Supply Rejection Ratio
64
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
300
450
mA
VOUT =0V
∆VOUT/∆PD
Thermal Regulation
0.04
V/W
Notes 5, 6
TSD
Thermal Shutdown Die Temperature
160
°C
∆T
SD
Thermal Shutdown Hysteresis
10
°C
eN
Output Noise
260
nV/
√Hz I
L =IOUTMAX
Note
1:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA,TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7:
Hysteresis voltage is referenced by VR.
8:
The minimum VIN has to justify the conditions: VIN ≥ VR +VDROPOUT and VIN ≥ 2.7V for IL =0.1mA to IOUTMAX.
TC VOUT =(VOUTMAX –VOUTMIN)x 10
6
VOUT x ∆T


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