NX3008CBKV

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 29 July 2011

11 of 21

NXP Semiconductors

NX3008CBKV

30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET

Fig 13. TR1: Transfer characteristics: drain current as

a function of gate-source voltage; typical

values

Fig 14. TR1: Normalized drain-source on-state

resistance as a function of junction

temperature; typical values

(1) maximum values

(2) typical values

(3) minimum values

Fig 15. TR1: Gate-source threshold voltage as a

function of junction temperature

Fig 16. TR1: Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

001aao271

03

2

1

0.2

0.1

0.3

0.4

(A)

0.0

(2)

(1)

-60

180

120

060

001aao272

1.0

0.5

1.5

2.0

a

0.0

-60

180

120

060

001aao273

0.5

1.0

1.5

(V)

0.0

(2)

(1)

(3)

001aao274

10

1

10

C

(pF)

1

(1)

(2)

(3)