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NX3008CBKV Datasheet(PDF) 11 Page - NXP Semiconductors |
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NX3008CBKV Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 21 page NX3008CBKV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 29 July 2011 11 of 21 NXP Semiconductors NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 14. TR1: Normalized drain-source on-state resistance as a function of junction temperature; typical values ID = 0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values f = 1 MHz; VGS = 0 V (1)Ciss (2)Coss (3)Crss Fig 15. TR1: Gate-source threshold voltage as a function of junction temperature Fig 16. TR1: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 001aao271 VGS (V) 03 2 1 0.2 0.1 0.3 0.4 ID (A) 0.0 (2) (1) Tj (˚C) -60 180 120 060 001aao272 1.0 0.5 1.5 2.0 a 0.0 Tj (˚C) -60 180 120 060 001aao273 0.5 1.0 1.5 VGS(th) (V) 0.0 (2) (1) (3) 001aao274 VDS (V) 10-1 102 10 1 10 102 C (pF) 1 (1) (2) (3) |
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