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TC1014 Datasheet(PDF) 3 Page - Microchip Technology

Part No. TC1014
Description  50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass
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Maker  MICROCHIP [Microchip Technology]
Homepage  http://www.microchip.com
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TC1014 Datasheet(HTML) 3 Page - Microchip Technology

 
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© 2002 Microchip Technology Inc.
DS21335B-page 3
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (VIN +0.3V)
Power Dissipation ............... Internally Limited (Note 7)
Maximum Voltage on Any Pin .........VIN +0.3V to -0.3V
Operating Temperature Range ......-40°C < TJ < 125°C
Storage Temperature ......................... -65°C to +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN =VR +1V, IL = 100µA, CL =3.3µF, SHDN >VIH,TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Device
Test Conditions
VIN
Input Operating Voltage
2.7
6.0
V
Note 1
IOUTMAX
Maximum Output Current
50
100
150
mA
TC1014
TC1015
TC1185
VOUT
Output Voltage
VR –2.5% VR ±0.5% VR +2.5%
V
Note 2
TCVOUT
VOUT Temperature Coefficient
20
40
ppm/°C
Note 3
∆VOUT/∆VIN Line Regulation
0.05
0.35
%(VR +1V) ≤ VIN ≤ 6V
∆VOUT/VOUT Load Regulation
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
IL = 0.1mA to IOUTMAX
IL = 0.1mA to IOUTMAX
(Note 4)
VIN-VOUT
Dropout Voltage
2
65
85
180
270
120
250
400
mV
TC1015; TC1185
TC1185
IL = 100µA
IL = 20mA
IL = 50mA
IL = 100mA
IL = 150mA (Note 5)
IIN
Supply Current (Note 8)
50
80
µASHDN =VIH,IL =0
IINSD
Shutdown Supply Current
0.05
0.5
µASHDN =0V
PSRR
Power Supply Rejection
Ratio
—64
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
300
450
mA
VOUT =0V
∆VOUT/∆PD Thermal Regulation
0.04
V/W
Notes 6, 7
TSD
Thermal Shutdown Die
Temperature
160
°C
∆TSD
Thermal Shutdown
Hysteresis
—10
°C
eN
Output Noise
600
nV/
√Hz
IL =IOUTMAX, F = 10kHz
470pF from Bypass
to GND
Note
1:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR +VDROPOUT.
2:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA,TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8:
Apply for Junction Temperatures of -40°C to +85°C.
TC VOUT =(VOUTMAX –VOUTMIN)x 10
6
VOUT x ∆T


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