28C16A

DS11125G-page 2

© 1996 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

1.1

MAXIMUM RATINGS*

Storage temperature .......................... -65˚C to +125˚C

Ambient temp. with power applied ....... -50˚C to +95˚C

*Notice: Stresses above those listed under “Maximum Ratings”

may cause permanent damage to the device. This is a stress rat-

ing only and functional operation of the device at those or any

other conditions above those indicated in the operation listings of

this specification is not implied. Exposure to maximum rating con-

ditions for extended periods may affect device reliability.

TABLE 1-1:

PIN FUNCTION TABLE

Name

Function

A0 - A10

Address Inputs

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

+5V Power Supply

Ground

NC

No Connect; No Internal Connection

NU

Not Used; No External Connection is

Allowed

TABLE 1-2:

READ/WRITE OPERATION DC CHARACTERISTICS

±10%

Commercial (C): Tamb =

0˚C

to

+70˚C

Industrial

(I): Tamb = -40˚C

to

+85˚C

Parameter

Status

Symbol

Min

Max

Units

Conditions

Input Voltages

Logic ‘1’

Logic ‘0;

2.0

-0.1

0.8

V

V

Input Leakage

—

-10

10

Input Capacitance

—

—10

pF

f = 1 MHz

Output Voltages

Logic ‘1’

Logic ‘0’

2.4

0.45

V

V

µA

Output Leakage

—

-10

10

Output Capacitance

—

—12

pF

f = 1 MHz

Power Supply Current,

Active

TTL input

—

30

mA

f = 5 MHz (Note 1)

Power Supply Current,

Standby

TTL input

TTL input

CMOS input

—2

3

100

mA

mA

µA

Note 1:

AC power supply current above 5 MHz; 1 mA/MHz.