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PTFA072401EL Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # PTFA072401EL
Description  Thermally-Enhanced High Power RF LDMOS FETs
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTFA072401EL Datasheet(HTML) 1 Page - Infineon Technologies AG

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All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 9
Rev. 05, 2015-02-24
PTFA072401EL
PTFA072401FL
Confidential, Limited Internal Distribution
5
15
25
35
45
55
65
15
16
17
18
19
20
21
30
35
40
45
50
55
Output Power (dBm)
Gain & Efficiency vs. Output Power
V
DD =30 V, IDQ =1.9 A, ƒ = 765 M Hz
Efficiency
Gain
Features
Broadband internal matching
Typical two-carrier WCDMA performance at
770 MHz, 30 V
- Average output power = 40 W
- Linear gain = 19 dB
- Efficiency = 25%
- Intermodulation distortion = –39 dBc
Typical CW performance, 770 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 58%
Integrated ESD protection
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Thermally-enhanced packages, Pb-free and RoHS
compliant with low gold (<0.25 micron) plating
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1800 mA, POUT = 40 W average, ƒ1 = 760 MHz, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
19
dB
Drain Efficiency
D
25
%
Intermodulation Distortion
IMD
–39
dBc
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 30 V, 725 – 770 MHz
Description
The PTFA072401EL and PTFA072401FL are 240-watt LDMOS
FETs designed for use in cellular power amplifier applications in the
725 to 770 MHz frequency band. These devices feature internal I/O
matching and thermally-enhanced, open-cavity ceramic packages.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA072401EL
Package H-33288-2
PTFA072401FL
Package H-34288-2
35
Ef
45
band inter
ypical two-c
770
- Ave
F Cha


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