PSMN034-100BS

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Product data sheet

Rev. 2 — 2 March 2012

6 of 14

NXP Semiconductors

PSMN034-100BS

N-channel 100 V 34.5 m

Ω standard level MOSFET in D2PAK.

turn-on delay time

-12

-ns

rise time

-

10

-

ns

turn-off delay time

-

28

-

ns

fall time

-9

-ns

Source-drain diode

source-drain voltage

see Figure 17

-

0.85

1.2

V

reverse recovery time

-38

-ns

recovered charge

-

59

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

003aae110

0

10

20

30

40

50

010

20

30

40

ID(A)

g fs

(S)

003aae107

0

5

10

15

20

25

30

01

23

45

V

GS(V)

I

D

(A)

°C

°C