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PSMN034-100BS Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN034-100BS Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page PSMN034-100BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 2 March 2012 6 of 14 NXP Semiconductors PSMN034-100BS N-channel 100 V 34.5 m Ω standard level MOSFET in D2PAK. td(on) turn-on delay time VDS =50V; RL =3.3 Ω; VGS =10V; RG(ext) =4.7 Ω; Tj =25°C -12 -ns tr rise time - 10 - ns td(off) turn-off delay time - 28 - ns tf fall time -9 -ns Source-drain diode VSD source-drain voltage IS =15A; VGS =0V; Tj =25°C; see Figure 17 - 0.85 1.2 V trr reverse recovery time IS =5A; dIS/dt = 100 A/µs; VGS =0V; VDS =50V -38 -ns Qr recovered charge - 59 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Fig 5. Forward transconductance as a function of drain current; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aae110 0 10 20 30 40 50 010 20 30 40 ID(A) g fs (S) 003aae107 0 5 10 15 20 25 30 01 23 45 V GS(V) I D (A) Tj = 25 °C Tj = 175 °C |
Similar Part No. - PSMN034-100BS_15 |
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Similar Description - PSMN034-100BS_15 |
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