DTC123J

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R206-076.I



PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

50

V

Input Voltage

-5 ~ +12

V

100

Output Current

100

mA

SOT-23/SOT-323

SOT-363

200

SOT-523

150

TO-92

625

Power Dissipation

TO-92SP

550

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

0.5

Input Voltage

1.1

V

Output Voltage

0.1

0.3

V

Input Current

3.6

mA

Output Current

0.5

μA

DC Current Gain

80

Input Resistance

1.54

2.2

2.86

KΩ

Resistance Ratio

17

21

26

Transition Frequency

250

MHz

Note: Transition frequency of the device