DTC114E

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-047.J



PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

50

V

Input Voltage

-10 ~ +40

V

Output Current

100

mA

Power Dissipation

SOT-23/SOT-323

200

mW

SOT-523

150

TO-92

625

TO-92SP

550

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

0.5

V

3

V

Output Voltage

0.1

0.3

V

Input Current

0.88

mA

Output Current

0.5

μA

DC Current Gain

30

Input Resistance

7

10

13

KΩ

Resistor Ratio

0.8

1

1.2

Transition Frequency

250

MHz

Note: Transition frequency of the device