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4124DL-T92-B Datasheet(PDF) 2 Page - Unisonic Technologies |
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4124DL-T92-B Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 4124D NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R204-031.B ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (VBE=0) VCES 350 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current DC IC 2 A Pulse (Note 2) ICP 4 A Base Current DC IB 1 A Pulse (Note 2) IBP 2 A Total Dissipation TO-92 PC 1.5 W TO-126 20 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case TO-92 θJC 80 °C/W TO-126 6.25 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IB=0 350 V Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 200 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 7 V Collector Cut-Off Current ICBO VCB=350V, IE=0 100 µA Collector-Emitter Cut-Off Current ICEO VCE=200V, IB=0 50 µA Emitter Cut-Off Current IEBO VEB=7V, IC=0 10 μA Collector-Emitter Saturation Voltage VCE(SAT)1 IC=0.5A, IB=0.1A 0.8 V VCE(SAT)2 IC=1.5A, IB=0.5A 1.0 V Base-Emitter Saturation Voltage VBE(SAT) IC=1A, IB=0.25A 1.5 V DC Current Gain hFE1 IC=0.2A,VCE=5V 8 50 hFE2 IC=2A,VCE=5V 5 Transition Frequency fT IC=0.5A, VCE=10V 4 MHz Storage Time tS VCC=24V, IC=0.5A, IB1=-IB2=0.1A 4 μs Fall Time tF 0.7 μs |
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