March 16,2015-REV.02

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

650

-

-

V

Gate Threshold Voltage

2

2.88

4

V

Drain-Source On-State Resistance

-

1.35

1.5

Ω

Zero Gate Voltage Drain Current

-

0.03

1.0

uA

Gate-Source Leakage Current

-

+10

+100

nA

Diode Forward Voltage

-

0.88

1.4

V

Dynamic

(Note 4)

Total Gate Charge

(Note 2,3)

-

16.8

-

nC

Gate-Source Charge

-

5

-

Gate-Drain Charge

-

6

-

Input Capacitance

Ciss

f=1.0MHZ

-

754

-

pF

Output Capacitance

Coss

-

97

-

Reverse Transfer Capacitance

Crss

-

0.8

-

Turn-On Delay Time

(Note 2,3)

-

14

-

ns

Turn-On Rise Time

-

28

-

Turn-Off Delay Time

-

38

-

Turn-Off Fall Time

-

28

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

7

A

Maximum Pulsed Drain-Source

Diode Forward Current

---

-

-

28

A

Reverse Recovery Time

trr

(Note 2)

-

493

-

ns

Reverse Recovery Charge

Qrr

-

2.99

-

uC

NOTES :

1.

2.

Pulse width<300us, Duty cycle<2%

3.

Essentially independent of operating temperature typical characteristics.

4.

Guaranteed by design, not subject to production testing