August 3,2015-REV.00

Page 2

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C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

1000

-

-

V

Gate Threshold Voltage

2

3.2

4

V

Drain-Source On-State Resistance

-

7.6

9

Ω

Zero Gate Voltage Drain Current

-

0.03

1.0

uA

Gate-Source Leakage Current

-

+10

+100

nA

Diode Forward Voltage

-

0.8

1.7

V

Dynamic

(Note 4)

Total Gate Charge

(Note 2,3)

-

14

-

nC

Gate-Source Charge

-

2.9

-

Gate-Drain Charge

-

7.9

-

Input Capacitance

Ciss

f=1.0MHZ

-

385

-

pF

Output Capacitance

Coss

-

42

-

Reverse Transfer Capacitance

Crss

-

8

-

Turn-On Delay Time

(Note 2,3)

-

10

-

ns

Turn-On Rise Time

-

23

-

Turn-Off Delay Time

-

37

-

Turn-Off Fall Time

-

34

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

2

A

Maximum Pulsed Drain-Source

Diode Forward Current

---

-

-

8

A

Reverse Recovery Time

trr

(Note 2)

-

647

-

ns

Reverse Recovery Charge

Qrr

-

1.77

-

uC

NOTES :

1.

2.

Pulse width<300us, Duty cycle<2%

3.

Essentially independent of operating temperature typical characteristics.

4.

Guaranteed by design, not subject to production testing