IPC302N20N3 datasheet(2/4 Pages) INFINEON

Part #	IPC302N20N3

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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OptiMOS™3PowerMOSTransistorChip

IPC302N20N3

Rev.2.6,2015-04-08

Final Data Sheet

PowerMOSTransistorChip

Drain

Gate

Source

1Description

•N-channelenhancementmode

•Foradditionalcharacteristicandmaxratingsrefertothedatasheetof

IPP110N20N3G

•AQL0.65forvisualinspectionaccordingtofailurecatalogue

•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C

•Diebond:solderedorglued

•Backsidemetallization:NiVsystem

•Frontsidemetallization:AlCusystem

•Passivation:nitride(onlyonedgestructure)

Table1KeyPerformanceParameters

Parameter

Value

Unit

V(BR)DSS

200

V

RDS(on)

12

1)

m

Ω

Die size

6.7 x 4.5

mm

2

Thickness

250

µm

Type/OrderingCode

Package

Marking

RelatedLinks

IPC302N20N3

Chip

not defined

-

2ElectricalCharacteristicsonWaferLevel

atTj=25°C,unlessotherwisespecified

Table2

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

200

-

V

VGS=0V,ID=1mA

Gate threshold voltage

VGS(th)

2

3

4

V

VDS=VGS,ID=260µA

Zero gate voltage drain current

IDSS

-

0.1

1

µA

VGS=0V,VDS=160V

Gate-source leakage current

IGSS

-

1

100

nA

VGS=20V,VDS=0V

Drain-source on- resistance

RDS(on)

-

9.2

2)

100

3)

m

Ω

VGS=10V,ID=2.0A

Reverse diode forward on-voltage

VSD

-

1.0

1.2

V

VGS=0V,IF=1A

Avalanche energy, single pulse

EAS

-

47

4)

-

mJ

ID =30 A, RGS =25

Ω

1) packaged in a P-TO220-3 (see ref. product)

2)typicalbaredieRDS(on);VGS=10V

3) limited by wafer test-equipment

4) Wafer tested. For general avalanche capability refer to the datasheet of IPP110N20N3 G

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