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IKW50N65WR5 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # IKW50N65WR5
Description  Reverse conducting IGBT with monolithic body diode
Download  15 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW50N65WR5 Datasheet(HTML) 8 Page - Infineon Technologies AG

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8
IKW50N65WR5
ReverseConductingSeries
Rev.1.2,2015-03-27
Figure 5.
Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
15
30
45
60
75
90
105
120
135
150
VGE = 20V
17V
15V
13V
11V
9V
8V
7V
6V
5V
Figure 6.
Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Tvj=25°C
Tvj=175°C
Figure 7.
Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
IC = 10A
IC = 25A
IC = 50A
Figure 8.
Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RG(on)=16
Ω,RG(off)=16Ω,dynamic
test circuit in Figure E)
IC,COLLECTORCURRENT[A]
0
20
40
60
80
100
1
10
100
1000
td(off)
tf
td(on)
tr


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