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PXAC260622SC Datasheet(PDF) 1 Page - Infineon Technologies AG |
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PXAC260622SC Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.1, 2015-06-03 PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 – 2690 MHz Description The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads RF Characteristics Single-carrier WCDMA Specifications (device tested in Infineon Doherty test fixture with straight leads) VDD = 28 V, IDQ = 115 mA, POUT = 8.9 W avg, ƒ1 = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.8 — dB Drain Efficiency hD 40 42 — % Adjancent Channel Power Ratio ACPR — –30 –27 dBc Features • Broadband internal input and output matching • Asymmetrical Doherty design - Main: 25 W Typ (P1dB) - Peak: 50 W Typ (P1dB) • Typical pulsed performance in a Doherty configura- tion, at 39.5 dB POUT, 2690 MHz, 28 V, with pulse 10 µs, 10% DC - Gain = 16dB - Efficiency = 45% • Integrated ESD protection • Pb-free and RoHS compliant • Capable of handling 10:1 VSWR @28 V, 50 W (CW) output power -75 -50 -25 0 25 50 75 0 4 8 12 16 20 24 27 31 35 39 43 47 Average Output Power (dBm) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW Gain Efficiency PAR @ 0.01% CCDF pxfc260622sc_g1 |
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Similar Description - PXAC260622SC_15 |
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