IPZ40N04S5-8R4 datasheet(1/9 Pages) INFINEON

Part #	IPZ40N04S5-8R4

Description	N-channel - Enhancement mode - Normal Level

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPZ40N04S5-8R4

OptiMOS

™

-5 Power-Transistor

Features

• OptiMOS

™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Unit

Continuous drain current

I D

T C=25°C, V GS=10V

1)

40

A

T C=100°C, V GS=10V

2)

33

Pulsed drain current

2)

I D,pulse

T C=25°C

160

Avalanche energy, single pulse

2)

E AS

I D=20A

24

mJ

Avalanche current, single pulse

I AS

-

40

A

Gate source voltage

V GS

-

±20

V

Power dissipation

P tot

T C=25°C

34

W

Operating and storage temperature

T j, T stg

-

-55 ... +175

°C

Value

V

DS

40

V

R

DS(on),max

8.4

m

W

I

D

40

A

Product Summary

PG-TSDSON-8

Type

Package

Marking

IPZ40N04S5-8R4

PG-TSDSON-8

5N0484

1

Rev. 1.0

page 1

2015-05-06

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IPZ40N04S5-8R4 Datasheet(PDF) 1 Page - Infineon Technologies AG

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