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PJS6835 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6835 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 6 page PPJS6835 March 6,2015-REV.00 Page 1 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -500mA SOT-23 6L Unit: inch(mm) Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.0141 grams Marking: SG5 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +10 V Continuous Drain Current ID -500 mA Pulsed Drain Current (Note 4) IDM -1000 mA Power Dissipation Ta=25 oC PD 500 mW Derate above 25 oC 4 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 250 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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