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PJS6816 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6816 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 6 page PPJS6816 April 14,2014-REV.03 Page 1 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.2A SOT-23 6L-1 Unit: inch(mm) Features RDS(ON) , VGS@4.5V, ID@5.2A<29m Ω RDS(ON) , VGS@2.5V, ID@3.7A<42m Ω RDS(ON) , VGS@1.8V, ID@1.6A<85m Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L-1 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: SE6 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS +12 V Continuous Drain Current ID 5.2 A Pulsed Drain Current IDM 20.8 A Power Dissipation Ta=25 oC PD 1.25 W Derate above 25 oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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