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PJE8401 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJE8401 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
1 / 6 page PPJE8401 March 10,2014-REV.00 Page 1 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -0.9A SOT-523 Unit : inch(mm) Features RDS(ON) , VGS@-4.5V, ID@-0.9A<130mΩ RDS(ON) , VGS@-2.5V, ID@-0.6A<160mΩ RDS(ON) , VGS@-1.8V, ID@-0.4A<210mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-523 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Marking: E01 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +12 V Continuous Drain Current ID -0.9 A Pulsed Drain Current IDM -3.6 A Power Dissipation Ta=25 oC PD 300 mW Derate above 25 oC 2.4 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 417 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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