SQS405EN

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Vishay Siliconix

S12-1845-Rev. C, 30-Jul-12

4

Document Number: 65704

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.8

- 50

- 25

25

75

125

0

50

100

150

175

0.9

1.1

1.0

1.2

1.3

T

0.00

01

3

24

5

0.08

0.06

0.04

0.02

0.10

0.001

0.0

0.2

0.6

1.0

0.4

0.8

1.2

0.01

1

0.1

10

100

V

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

- 50

- 25

0

25

50

75

100

125

150

175

T

I

I

- 16.0

- 50

- 25

25

75

125

0

50

100

150

175

- 14.0

- 14.5

- 15.0

- 15.5

- 13.5

- 13.0

T