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SQR40N10-25 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQR40N10-25 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQR40N10-25 www.vishay.com Vishay Siliconix S15-1873-Rev. F, 10-Aug-15 1 Document Number: 69060 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 100 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PRODUCT SUMMARY VDS (V) 100 RDS(on) ( Ω) at VGS = 10 V 0.025 RDS(on) ( Ω) at VGS = 4.5 V 0.029 ID (A) 40 Configuration Single Package TO-252 Reverse Lead DPAK TO-252 Reverse Lead DPAK Top View G S D Bottom View L S G D Drain connected to tab D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID 40 A TC = 125 °C 26 Continuous Source Current (Diode Conduction) a IS 40 Pulsed Drain Current b IDM 160 Single Pulse Avalanche Current L = 0.1 mH IAS 40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation b TC = 25 °C PD 136 W TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 |
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