PSMN6R0-25YLB

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Product data sheet

Rev. 2 — 31 October 2011

6 of 15

NXP Semiconductors

PSMN6R0-25YLB

N-channel 25 V 6.1 m

Ω logic level MOSFET in LFPAK using NextPower technology

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source breakdown

voltage

25

--V

22.5

-

-

V

see Figure 10; see Figure 11

1.05

1.42

1.95

V

0.5

-

-

V

--2.25

V

drain leakage current

--1

µA

-

-

100

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

see Figure 12

-6.7

7.9

m

Ω

see Figure 12; see Figure 13

--13

m

Ω

see Figure 12

-5.1

6.1

m

Ω

see Figure 12; see Figure 13

-

-

10.1

m

Ω

internal gate resistance (AC)

f = 1 MHz

-

1.62

3.24

Ω

Dynamic characteristics

total gate charge

Figure 14; see Figure 15

-

19.3

-

nC

see Figure 14; see Figure 15

-9

-nC

-

17.7

-

nC

gate-source charge

see Figure 14; see Figure 15

-2.6

-nC

pre-threshold gate-source

charge

-1.9

-nC

post-threshold gate-source

charge

-0.7

-nC

gate-drain charge

-

2.6

-

nC

gate-source plateau voltage

see Figure 15

-2.44

-V

input capacitance

-

1099

-

pF

output capacitance

-

337

-

pF

reverse transfer capacitance

-

99

-

pF

turn-on delay time

-16

-ns

rise time

-

17

-

ns

turn-off delay time

-

30

-

ns

fall time

-9

-ns