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SQM120N04-1M7 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQM120N04-1M7 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page SQM120N04-1m7 www.vishay.com Vishay Siliconix S12-0532-Rev. A, 12-Mar-12 1 Document Number: 63811 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES •TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd •100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.0017 ID (A) 120 Configuration Single D G S N-Channel MOSFET TO-263 S D G Top View ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120N04-1m7-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C ID 120 A TC = 125 °C 120 Continuous Source Current (Diode Conduction)a IS 120 Pulsed Drain Currentb IDM 480 Single Pulse Avalanche Current L = 0.1 mH IAS 85 Single Pulse Avalanche Energy EAS 361 mJ Maximum Power Dissipationb TC = 25 °C PD 375 W TC = 125 °C 125 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.4 |
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Similar Description - SQM120N04-1M7_15 |
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